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IXFK48N55

IXYS
Part Number IXFK48N55
Manufacturer IXYS
Description Power MOSFET
Published Jan 9, 2016
Detailed Description HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110...
Datasheet PDF File IXFK48N55 PDF File

IXFK48N55
IXFK48N55

Overview
HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW trr £ 250 ns Preliminary data Symbol VDSS V DGR VGS V GSM I D25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.
6 mm (0.
063 in.
) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 550 V 550 V ±20 V ±30 V 48 A 192 A 44 A 60 mJ 3J 5 V/ns 560 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 300 °C 0.
9/6 Nm/lb.
in.
6g 10 g Test Conditions VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Note 1 Characteristic Values (T J = 25°C, unless otherwise specified) min.
typ.
max.
550...


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