DatasheetsPDF.com

IXTJ36N20

IXYS
Part Number IXTJ36N20
Manufacturer IXYS
Description N-Channel MOSFET
Published Jan 9, 2016
Detailed Description ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 ...
Datasheet PDF File IXTJ36N20 PDF File

IXTJ36N20
IXTJ36N20

Overview
ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 200 V 200 V ±20 V ±30 V 36 A 144 A 36 A 19 mJ 5 V/ns 300 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
5g 300 ° C Symbol V DSS VGS(th) IGSS I DSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.
8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 18A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 200 2...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)