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MTB75N06HD

ON Semiconductor
Part Number MTB75N06HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 10, 2016
Detailed Description MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hi...
Datasheet PDF File MTB75N06HD PDF File

MTB75N06HD
MTB75N06HD

Overview
MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured − Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C (Note 1.
) VDSS VDGR VGS VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 20 Vdc ± 30 Vpk 75 Adc 50 225 Apk 125 Watts 1.
0 W/°C 2.
5 Watts Operating and Storage Temperature Range − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.
177 mH, RG = 25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.
) EAS RθJC RθJA RθJA 500 mJ 1.
0 °C/W 62.
5 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1.
When surface mounted to an FR4 board using the minimum recommended pad size.
http://onsemi.
com 75 AMPERES 60 VOLTS RDS(on) = 10 mΩ N−Channel D G S 12 3...


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