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NCE55P30

NCE Power
Part Number NCE55P30
Manufacturer NCE Power
Description P-Channel Enhancement Mode Power MOSFET
Published Jan 11, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 ...
Datasheet PDF File NCE55P30 PDF File

NCE55P30
NCE55P30

Overview
http://www.
ncepower.
com Pb Free Product NCE55P30 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE55P30 NCE55P30 TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit -55 ±20 -30 -21 110 90 0.
72 420 -55 To 150 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE55P30 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.
39 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=-250μA VDS=-55V,VGS=0V VGS=±20V,VDS=0V -55 --- 1 ±100 V μA nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -2 -2.
6 -4 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-15A - 30 40 ...


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