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RP1L080SN

Rohm
Part Number RP1L080SN
Manufacturer Rohm
Description N-Channel MOSFET
Published Jan 12, 2016
Detailed Description Data Sheet 4V Drive Nch MOSFET RP1L080SN Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast sw...
Datasheet PDF File RP1L080SN PDF File

RP1L080SN
RP1L080SN

Overview
Data Sheet 4V Drive Nch MOSFET RP1L080SN Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application Switching  Dimensions (Unit : mm) MPT6 (Single) (6) (5) (4) (1) (2) (3) Packaging specifications Package Type Code Basic ordering unit (pieces) RP1L080SN Taping TR 1000  Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg 60 20 8.
0 32 1.
6 32 2.
0 150 55to150 *1 Pw≤10s, Duty cycle≤1% *2 Mounted on a ceramic board Unit V V A A A A W C C  Inner circuit (6) (5) (4) (1) Source (2) Source (3) Gate (4) Drain (5) Drain (6) Drain ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Thermal resistance Parameter Channel to Ambient * Mounted on a ceramic board Symbol Rth (ch-a)* Limits 62.
5 Unit C / W www.
rohm.
com © 2011 ROHM Co.
, Ltd.
All rights reserved.
1/6 2011.
08 - Rev.
A RP1L080SN Electrical characteristics (Ta = 25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS * (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min.
60 - 1.
0 - 8.
5 - 　 Typ.
17 19 20 - 1700 330 170 18 25 70 30 40 5.
0 9.
0 Max.
10 1 3.
0 24 27 28 - Unit Conditions A VGS=20V, VDS=0V V ID=1mA, VGS=0V A VDS=60V, VGS=0V V VDS=10V, ID=1mA ID=8.
0A, VGS=10V m ID=8.
0A, VGS=4.
5V ID=8.
0A, VGS=4.
0V S ID=8.
0A, VDS=10V pF VD...


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