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ZXM66N02N8

Zetex Semiconductors
Part Number ZXM66N02N8
Manufacturer Zetex Semiconductors
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Published Jan 13, 2016
Detailed Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM66N02N8 SUMMARY (BR)DSS=20V; RDS(ON)=0.015 D=9A DESCRIPTION This new genera...
Datasheet PDF File ZXM66N02N8 PDF File

ZXM66N02N8
ZXM66N02N8

Overview
20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM66N02N8 SUMMARY (BR)DSS=20V; RDS(ON)=0.
015 D=9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL ZXM66N02N8TA 13 12mm embossed 1000 units DEVICE MARKING • ZXM6 6N02 SO8 S S S Top View 4 3 21 5 6 78 D D D DRAFT ISSUE A - AUGUST 2000 ADVANCED INFORMATION ZXM66N02N8 ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (VGS=4.
5V; TA=25°C)(b)(d) (VGS=4.
5V; TA=70°C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor VDSS VGS ID IDM IS ISM PD Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD Operating and Storage Temperature Range Tj:Tstg LIMIT 20 ±12 9.
0 8.
0 35 3.
1 35 - - 2.
5 20 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) Junction to Ambient (b) RθJA RθJA - °C/W 30 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.
Refer to Transient Thermal Impedance graph.
DRAFT ISSUE A - AUGUST 2000 ADVANCED INFORMATION ZXM66N02N8 ELECTRICAL...


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