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MTB15N06V

ON Semiconductor
Part Number MTB15N06V
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Jan 13, 2016
Detailed Description MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N−Channel Enhancement−Mod...
Datasheet PDF File MTB15N06V PDF File

MTB15N06V
MTB15N06V

Overview
MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E−FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
New Features of TMOS V • On−resistance Area Product about One−half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E−FET Predecessors Features Common to TMOS V ...


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