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NTLUS3A90PZC

ON Semiconductor
Part Number NTLUS3A90PZC
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 13, 2016
Detailed Description NTLUS3A90PZC Power MOSFET −20 V, −5.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package Features • UDFN Pac...
Datasheet PDF File NTLUS3A90PZC PDF File

NTLUS3A90PZC
NTLUS3A90PZC

Overview
NTLUS3A90PZC Power MOSFET −20 V, −5.
0 A, mCoolt Single P−Channel, ESD, 1.
6x1.
6x0.
55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 1.
6x1.
6x0.
55 mm for Board Space Saving • Lowest RDS(on) in 1.
6x1.
6 Package • ESD Protected • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Side Load Switch • PA Switch and Battery Switch • Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Steady Current (Note 1) State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD −20 ±8.
0 −4.
0 −2.
9 −5.
0 1.
5 V V A W t ≤ 5 s TA = 25°C 2.
3 Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C ID −2.
6 A −1.
9 Power Dissipation (Note 2) TA = 25°C PD 0.
6 W Pulsed Drain Current tp = 10 ms IDM −17 A Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 2) IS −0.
84 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.
127 in sq [2 oz] including traces).
2.
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz.
Cu.
http://onsemi.
com V(BR)DSS −20 V MOSFET RDS(on) MAX 62 mW @ −4.
5 V 95 mW @ −2.
5 V 140 mW @ −1.
8 V 230 mW @ −1.
5 V ID MAX −5.
0 A S G D P−Channel MOSFET 6 UDFN6 CASE 517AU 1 mCOOLt MARKING DIAGRAM 1 AG MG G AG= Specific Device Cod...


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