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IRL3302PBF

International Rectifier
Part Number IRL3302PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 13, 2016
Detailed Description l Advanced Process Technology l Optimized for 4.5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Te...
Datasheet PDF File IRL3302PBF PDF File

IRL3302PBF
IRL3302PBF

Overview
l Advanced Process Technology l Optimized for 4.
5V Gate Drive l Ideal for CPU Core DC-DC Converters l 150°C Operating Temperature l Fast Switching l Lead-Free Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment.
Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100µs) Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient G PD-95660 IRL3302PbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.
020Ω ID = 39A S TO-220AB Max.
39 25 160 57 0.
45 ± 10 14 130 23 5.
7 5.
0 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V mJ A mJ V/ns °C Typ.
––– 0.
50 ––– Max.
2.
2 ––– 62 Units °C/W 7/30/04 IRL3302PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) VGS(th) gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td(on) tr td(o...


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