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IRL1104PbF

Part Number	IRL1104PbF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Jan 13, 2016
Detailed Description	l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operatin...
Datasheet	IRL1104PbF PDF File

Overview

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance Parameter RθJC RθCS RθJA www.
irf.
com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient PD - 95404 IRL1104PbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 0.
008Ω S ID = 104A TO-220AB Max.
104 74 416 167 1.
1 ±16 340 62 17 5.
0 -55 to + 175 300 (1.
6mm from case) 10 lbf•in (1.
1N•m) Min.
–––– –––– –––– Typ.
–––– 0.
50 –––– Max.
0.
9 –––– 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1 6/17/04 IRL1104PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficien...

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IRL1104PbF Power MOSFET - International Rectifier

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