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IRL3103D2PBF

International Rectifier
Part Number IRL3103D2PBF
Manufacturer International Rectifier
Description MOSFET & SCHOTTKY RECTIFIER
Published Jan 14, 2016
Detailed Description PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET® Power MOSFET and Schottky Diode l Gener...
Datasheet PDF File IRL3103D2PBF PDF File

IRL3103D2PBF
IRL3103D2PBF

Overview
PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Synchronous Regulator Application l Lead-Free G D VDSS = 30V RDS(on) = 0.
014Ω ID = 54A Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications.
A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.
S The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
54 34 220 2.
0 70 0.
56 ± 16 -55 to + 150 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W W/°C V °C Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient Typ.
––– ––– Max.
1.
8 62 Units °C/W 06/22/04 IRL3103D2PbF MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) VGS(th) gfs Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Leakage Current Gate-to-Source Forward Leak...


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