DatasheetsPDF.com

MTB52N06V

ON Semiconductor
Part Number MTB52N06V
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 15, 2016
Detailed Description MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hig...
Datasheet PDF File MTB52N06V PDF File

MTB52N06V
MTB52N06V


Overview
MTB52N06V Preferred Device Power MOSFET 52 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.
) VDSS VDGR VGS VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 20 ± 25 52 41 182 188 1.
25 3.
0 Vdc Vpk Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 52 Apk, L = 0.
3 mH, RG = 25 Ω) EAS 406 mJ Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.
) RθJC RθJA RθJA °C/W 0.
8 62.
5 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1.
When surface mounted to an FR4 board using the minimum recommended pad size.
http://onsemi.
com 52 AMPERES 60 VOLTS RDS(on) = 22 mΩ N−Channel D G S 12 3 4 D2PAK CASE 418B STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain MTB52N06V YWW 12 Gate Drain 3 Source MTB52N06V Y WW = Device Code = Year = Work Week ORDERING INFORMATION Device Package Shipping MTB52N06V MTB52N06VT4 D2PAK D2PAK 50 Units/Rail 800/Tape & Reel Preferred devices are recommended choices for future ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)