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MTB75N05HD

ON Semiconductor
Part Number MTB75N05HD
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 15, 2016
Detailed Description MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hi...
Datasheet PDF File MTB75N05HD PDF File

MTB75N05HD
MTB75N05HD

Overview
MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured − Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation w These devices are available in Pb−free package(s).
Specifications herein apply to both standard and Pb−free devices.
Please see our website at www.
onsemi.
com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−to−Source Voltage VDSS 50 Drain−to−Gate Voltage (RGS = 1.
0 MΩ) VDGR 50 Gate−to−Source Voltage − Continuous VGS ± 20 Drain Current − Continuous ID 75 Drain Current − Continuous @ 100°C ID 65 Drain Current − Single Pulse (tp ≤ 10 μs) IDM 225 Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (minimum footprint, FR−4 board) PD 125 1.
0 2.
5 Operating and Storage Temperature Range TJ, Tstg − 55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 V, VGS = 10 V, Peak IL = 75 A, L = 0.
177 mH, RG = 25 Ω) Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (minimum foot- print, FR−4 board) EAS RθJC RθJA RθJA 500 1.
0 62.
5 50 Maxim...


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