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SBT10100UCT

Pan Jit International
Part Number SBT10100UCT
Manufacturer Pan Jit International
Description EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
Published Jan 16, 2016
Detailed Description PSBT10100UCT EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER Voltage 100 V Current 10 A Features  Ideal for automated p...
Datasheet PDF File SBT10100UCT PDF File

SBT10100UCT
SBT10100UCT

Overview
PSBT10100UCT EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER Voltage 100 V Current 10 A Features  Ideal for automated placement  Extreme low forward voltage drop, low power loss  High efficiency operation  Low thermal resistance  Lead free in compliance with EU RoHS 2011/65/EU directive 0.
419(10.
66) 0.
387(9.
85) 0.
156(3.
95) 0.
147(3.
75) Mechanical Data  Case: Molded plastic, TO-220AB  Terminals: solder plated, solderable per MIL-STD-750,Method 2026  Approx.
Weight: 0.
067 ounces, 1.
89 grams.
 Marking: Part number 0.
058(1.
47) 0.
042(1.
07) 0.
038(0.
96) 0.
019(0.
50) 0.
100(2.
54) 0.
100(2.
54) 0.
177(4.
5) MAX.
0.
50(12.
7)MIN.
0.
624(15.
87) 0.
548(13.
93) 0.
146(3.
7) 0.
130(3.
3) 0.
196(5.
00) 0.
163(4.
16) 0.
054(1.
39) 0.
045(1.
15) 0.
115(2.
92) 0.
080(2.
03) 0.
025(0.
65)MAX.
Maximum Ratings And Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum rms voltage Maximum dc blocking voltage per diode Maximum average forward rectified current per device Peak forward surge current : 8.
3ms single half sine- wave superimposed on rated load per diode Typical thermal resistance per diode (Note 1) Operating junction temperature range Storage temperature range SYMBOL VRRM VRMS VR IF(AV) IFSM RθJC TJ TSTG LIMIT 100 70 100 5 10 150 2 -55 to +150 -55 to +150 Note : 1.
Device mounted on a infinite heatsink .
UNIT V V V A A oC/W oC oC April 14,2015-REV.
00 Page 1 PSBT10100UCT Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Breakdown voltage per diode Instantaneous forward voltage per diode SYMBOL VBR VF TEST CONDITION IR=0.
5mA TJ=25oC IF=1A IF=3A IF=5A IF=1A IF=3A TJ=25oC TJ=125oC Reverse current per diode VR=80V TJ=25oC IR TJ=25oC VR=100V TJ=125oC MIN.
100 - - - TYP.
- 0.
4 0.
49 0.
56 0.
3 0.
43 5 5 MAX.
UNITS -V 0.
61 - - 60 - V V A A mA IF, Forward Current (A) 5 4 3 2 1 per diode 0 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.
1 Forward Current Der...


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