DatasheetsPDF.com

MBR4035PT

Vishay
Part Number MBR4035PT
Manufacturer Vishay
Description Dual Common Cathode Schottky Rectifier
Published Jan 16, 2016
Detailed Description MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky R...
Datasheet PDF File MBR4035PT PDF File

MBR4035PT
MBR4035PT

Overview
MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.
vishay.
com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) 40 A VRRM 35 V, 45 V, 50 V, 60 V IFSM VF TJ max.
400 A 0.
60 V, 0.
62 V 150 °C Package TO-247AD (TO-3P) Diode variations Common cathode FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM 35 45 50 60 V VRWM 35 45 50 60 V VDC 35 45 50 60 V Maximum average forward rectified current TC = 125 °C Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current per diode IF(AV) IFSM IRRM (1) 40 400 2.
0 1.
0 A A A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range Storage temperature range TJ TSTG -65 to +150 -65 to +175 °C °C Note (1) 2.
0 μs pulse width, f = 1.
0 kHz Revision: 17-Aug-15 1 Document Number: 88679 For technical questions within your regi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)