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FQE10N20C

Fairchild Semiconductor
Part Number FQE10N20C
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Jan 17, 2016
Detailed Description FQE10N20C FQE10N20C 200V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effe...
Datasheet PDF File FQE10N20C PDF File

FQE10N20C
FQE10N20C

Overview
FQE10N20C FQE10N20C 200V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
Features • 4.
0A, 200V, RDS(on) = 0.
36Ω @VGS = 10 V • Low gate charge ( typical 20 nC) • Low Crss ( typical 40.
5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability GD S TO-126 FQE Series G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC...


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