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FDB8443_F085

Fairchild Semiconductor
Part Number FDB8443_F085
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published Jan 17, 2016
Detailed Description FDB8443_F085 N-Channel PowerTrench® MOSFET Sep 2011 FDB8443_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.0mΩ Featur...
Datasheet PDF File FDB8443_F085 PDF File

FDB8443_F085
FDB8443_F085

Overview
FDB8443_F085 N-Channel PowerTrench® MOSFET Sep 2011 FDB8443_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.
0mΩ Features „ Typ rDS(on) = 2.
3mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 142nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems ©2011 Fairchild Semiconductor Corporation FDB8443_F085 Rev.
C1 1 www.
fairchildsemi.
com FDB8443_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 146oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings 40 ±20 80 25 See Figure 4 531 188 1.
25 -55 to +175 Units V V A mJ W W/oC oC RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.
8 62 43 oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8443 Device FDB8443_F085 Package TO-263AB Reel Size 330mm Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics Tape Width 24mm Quantity 800 units Min Typ Max Units BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V 40 - - -V - 1 250 μA - ±100 nA VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance ...


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