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MTP3055V

ON Semiconductor
Part Number MTP3055V
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 19, 2016
Detailed Description MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand hig...
Datasheet PDF File MTP3055V PDF File

MTP3055V
MTP3055V


Overview
MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• On−resistance Area Product about One−half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E−FET Predecessors • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E−FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 60 60 ± 20 ± 25 12 7.
3 37 48 0.
32 Operating and Storage Temperature Range TJ, Tstg −55 to 175 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.
0 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RθJC RθJA TL 72 3.
13 62.
5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C http://onsemi.
com 12 AMPERES 50 VOLTS RDS(on) = 150 mΩ N−Channel D G S MARKING DIAGRAM & PIN ASSIGNMENT 4 4 Drain 12 3 TO−220AB CASE 221A STYLE 5 MTP3055V LLYWW 1 Gate 3 Source 2 Drain MTP3055V LL Y WW = Device Code = Location Code = Year = Work Week ORDERING INFORMATION Device Package Shipping MTP3055V TO−220AB 50 Units/R...



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