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PJF8NA50

Pan Jit International
Part Number PJF8NA50
Manufacturer Pan Jit International
Description 500V N-Channel MOSFET
Published Jan 19, 2016
Detailed Description PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET Voltage 500 V Current 8A Features  RDS(ON), VGS@1...
Datasheet PDF File PJF8NA50 PDF File

PJF8NA50
PJF8NA50

Overview
PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET Voltage 500 V Current 8A Features  RDS(ON), VGS@10V,ID@4A<0.
9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-252AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-220AB Approx.
Weight : 0.
067 ounces, 1.
9 grams  ITO-220AB-F Approx.
Weight : 0.
068 ounces, 2 grams ITO-220AB-F TO-220AB TO-252AA TO-251AA Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AA Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 130 1.
04 0.
96 110 TO-220AB ITO-220AB-F TO-252AA UNITS 500 +30 8 32 512 134 49 1.
07 0.
39 130 1.
04 V V A A mJ W W/ oC -55~150 oC 0.
93 2.
55 0.
96 oC/W 62.
5 120 110  Limited only By Maximum Junction Temperature March 10,2014-REV.
00 Page 1 PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 4) BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=4A VDS=500V,VGS=0V VGS=+30V,VDS=0V IS=8A,VGS=0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance...


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