DatasheetsPDF.com

NDDL01N60Z

ON Semiconductor
Part Number NDDL01N60Z
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 20, 2016
Detailed Description NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features • 100% Avalanche Tested • Gate Charge Minimized • Ze...
Datasheet PDF File NDDL01N60Z PDF File

NDDL01N60Z
NDDL01N60Z

Overview
NDDL01N60Z, NDTL01N60Z N-Channel Power MOSFET 600 V, 15 W Features • 100% Avalanche Tested • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady State, TC = 25°C (Note 1) Continuous Drain Current Steady State, TC = 100°C (Note 1) Power Dissipation Steady State, TC = 25°C Pulsed Drain Current, tp = 10 ms Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 0.
8 A) Peak Diode Recovery (Note 2) VDSS VGS ID ID PD IDM IS EAS dv/dt 600 ±30 0.
8 0.
25 V V A 0.
5 0.
15 A 26 2 W 3.
4 2.
5 1.
7 12 A A mJ 4.
5 V/ns Lead Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Limited by maximum junction temperature 2.
IS = 1.
5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDDL1N60Z Junction−to−Ambient (Note 4) NDDL1N60Z (Note 3) NDDL1N60Z−1 (Note 4) NDTL1N60Z (Note 5) NDTL1N60Z RqJC RqJA 4.
8 °C/W 42 °C/W 96 62 151 3.
Insertion mounted.
4.
Surface−mounted on FR4 board using 1” sq.
pad size (Cu area = 1.
127” sq.
[2 oz] including traces).
5.
Surface−mounted on FR4 board using minimum recommended pad size (Cu area = 0.
026” sq.
[2 oz]).
http://onsemi.
com V(BR)DSS 600 V RDS(ON) MAX 15 W @ 10 V N−Channel MOSFET D (2, 4) G (1) S (3) 4 1 23 SOT−223 CASE 318E STYLE 3 4 4 12 3 DPAK CASE 369C STYLE 2 1 23 IPAK CASE 369D STYLE 2 MARKING & ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 3 of this data sheet.
© Semic...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)