DatasheetsPDF.com

SB007-03C

ON Semiconductor
Part Number SB007-03C
Manufacturer ON Semiconductor
Description Schottky Barrier Diode
Published Jan 21, 2016
Detailed Description Ordering number : ENA0405B SB007-03C Schottky Barrier Diode 30V, 70mA, Low IR, Single CP http://onsemi.com Applicatio...
Datasheet PDF File SB007-03C PDF File

SB007-03C
SB007-03C

Overview
Ordering number : ENA0405B SB007-03C Schottky Barrier Diode 30V, 70mA, Low IR, Single CP http://onsemi.
com Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (VF max=0.
55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj Storage Temperature Tstg Conditions 50Hz sine wave, 1 cycle Ratings 30 35 70 2 --55 to +125 --55 to +125 Unit V V mA A °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7013A-004 2.
9 0.
1 SB007-03C-TB-E 3 Product & Package Information • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type: TB Marking 0.
05 1.
1 2.
5 0.
3 0.
5 1.
5 0.
5 LOT No.
LOT No.
1 0.
95 2 0.
4 1 : Anode 2 : No Contact 3 : Cathode CP TB Electrical Connection 3 G 12 Semiconductor Components Industries, LLC, 2013 September, 2013 71112 TKIM/13107 TIIM TC-00000490 / 71206 / 42506SB MSIM TA-100466 No.
A0405-1/5 SB007-03C Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rth(j-a)1 Rth(j-a)2 Conditions IR=20μA, Tj=25°C IF=70mA, Tj=25°C VR=15V, Tj=25°C VR=10V, f-1MHz IF=IR=10mA, Tj=25°C, See specified Test Circuit.
Mounted in Cu-foiled area of 16mm2×0.
2mm on glass epoxy board min 30 Ratings typ ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)