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FDD5810_F085

Fairchild Semiconductor
Part Number FDD5810_F085
Manufacturer Fairchild Semiconductor
Description N-Channel Logic Level Trench MOSFET
Published Jan 21, 2016
Detailed Description FDD5810_F085 N-Channel Logic Level Trench® MOSFET MPLEMENTATION May 2010 FDD5810_F085 N-Channel Logic Level Trench® MO...
Datasheet PDF File FDD5810_F085 PDF File

FDD5810_F085
FDD5810_F085

Overview
FDD5810_F085 N-Channel Logic Level Trench® MOSFET MPLEMENTATION May 2010 FDD5810_F085 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27m: Features „ RDS(ON) = 22m: Typ.
), VGS = 5V, ID = 29A „ Qg(5) = 13nC (Typ.
), VGS = 5V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse / Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Motor / Body Load Control „ ABS Systems „ Powertrain Management „ Injection System „ DC-DC converters and Off-line UPS „ Distributed Power Architecture and VRMs „ Primary Switch for 12V and 24V systems AD FREE I LE D G S DTO-P-2A5K2 (TO-252) D G S ©2010 Fairchild Semiconductor Corporation FDD5810_F085 Rev.
A1 (W) 1 www.
fairchildsemi.
com FDD5810_F085 N-Channel Logic Level Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Drain Current Continuous (VGS = 5V) Continuous (TA = 25oC, VGS = 10V, with RTJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power Dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 60 r20 37 33 7.
4 Figure 4 45 72 0.
48 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RTJC RTJA Maximum Thermal resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.
1 52 oC/W oC/W Package Marking and Ordering Information Device Marking FDD5810 Device FDD5810_F085 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250PA, VGS = 0V VDS = 48V VGS = 0V TC = 150oC VGS = r20V On Characteristics VGS(TH) Gate to Source Threshold Voltage RDS(ON) Drain to Source On Resistance V...


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