DatasheetsPDF.com

CEB08N6A

CET
Part Number CEB08N6A
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N6A CE...
Datasheet PDF File CEB08N6A PDF File

CEB08N6A
CEB08N6A

Overview
CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N6A CEB08N6A CEF08N6A VDSS 600V 600V 600V RDS(ON) 1.
25Ω 1.
25Ω 1.
25Ω ID 7.
5A 7.
5A 7.
5A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 7.
5 5.
2 30 150 1 7.
5 5.
2 d 30 d 48 0.
3 Single Pulsed Avalanche Energy h EAS 245 Single Pulsed Avalanche Current h IAS 7 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.
5 3.
1 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2012.
Feb http://www.
cetsemi.
com CEP08N6A/CEB08N6A CEF08N6A Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3.
1A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)