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CEB18N5

CET
Part Number CEB18N5
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP18N5/CEB18N5 CEF18N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP18N5 CEB18N...
Datasheet PDF File CEB18N5 PDF File

CEB18N5
CEB18N5


Overview
CEP18N5/CEB18N5 CEF18N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP18N5 CEB18N5 CEF18N5 VDSS 500V 500V 500V RDS(ON) 0.
27Ω 0.
27Ω 0.
27Ω ID 18A 18A 18A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 500 ±30 18 11 72 219 1.
8 18 d 11 d 72 d 74 0.
6 Single Pulsed Avalanche Energy e EAS 859 Single Pulsed Avalanche Current e IAS 18 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
57 62.
5 1.
7 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2013.
Jan.
http://www.
cetsemi.
com CEP18N5/CEB18N5 CEF18N5 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 9A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On D...


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