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NCE0224DA

NCE Power Semiconductor
Part Number NCE0224DA
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jan 25, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE0224DA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D...
Datasheet PDF File NCE0224DA PDF File

NCE0224DA
NCE0224DA

Overview
http://www.
ncepower.
com Pb Free Product NCE0224DA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224DA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V (Typ:62mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE0224DA NCE0224DA TO-263-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID (100℃) IDM PD EAS TJ,TSTG Limit 200 ±20 24 17 100 150 250 -55 To 175 Unit V V A A A W mJ ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE0224DA Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=200V,VGS=0V VGS=±20V,VDS=0V 200 220 --- 1 ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dyn...


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