DatasheetsPDF.com

NCE1512IA

NCE Power Semiconductor
Part Number NCE1512IA
Manufacturer NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Published Jan 25, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE1512IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1512...
Datasheet PDF File NCE1512IA PDF File

NCE1512IA
NCE1512IA

Overview
http://www.
ncepower.
com Pb Free Product NCE1512IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1512IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 150V,ID =12A RDS(ON) <160mΩ @ VGS=10V (Typ:130mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package NCE1512IA NCE1512IA TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 150 ±20 12 50 55 -55 To 175 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 2.
7 ℃/W Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE1512IA Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=150V,VGS=0V VGS=±20V,VDS=0V Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=5A VDS=15V,ID=10A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Clss Coss Crss VDS=25V,VGS=0V, F=1.
0MHz Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)