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PJD25N06A

Pan Jit International
Part Number PJD25N06A
Manufacturer Pan Jit International
Description 60V N-Channel Enhancement Mode MOSFET
Published Jan 26, 2016
Detailed Description PPJD25N06A 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 25 A Features  RDS(ON), VGS@10V,ID@15A<34mΩ...
Datasheet PDF File PJD25N06A PDF File

PJD25N06A
PJD25N06A

Overview
PPJD25N06A 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 25 A Features  RDS(ON), VGS@10V,ID@15A<34mΩ  RDS(ON), VGS@4.
5V,ID@10A<40mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx.
Weight : 0.
0104 ounces, 0.
297grams TO-252 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note 1) Power Dissipation Continuous Drain Current TC=25oC TC=100oC TC=25oC TC=25oC TC=100oC TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 60 +20 25 16 100 40 16 5.
5 4.
4 2.
0 1.
3 24 -55~150 3.
1 62.
5 UNITS V V A W A A W mJ oC oC/W July 9,2015-REV.
00 Page 1 PPJD25N06A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS VSD TEST CONDITION VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=15A VGS=4.
5V,ID=10A VDS=60V,VGS=0V VG...


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