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PJQ5465A

Pan Jit International
Part Number PJQ5465A
Manufacturer Pan Jit International
Description 60V P-Channel Enhancement Mode MOSFET
Published Jan 26, 2016
Detailed Description PPJQ5465A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -16 A DFN5060-8L Features  RDS(ON), VGS@-10...
Datasheet PDF File PJQ5465A PDF File

PJQ5465A
PJQ5465A


Overview
PPJQ5465A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -16 A DFN5060-8L Features  RDS(ON), VGS@-10V,ID@-8A<48mΩ  RDS(ON), VGS@-4.
5V,ID@-4A<65mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
0028 ounces, 0.
08 grams  Marking: Q5465A Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note 1) TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance (Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT -60 +20 -16 -10 -64 25 10 -5.
0 -4.
0 2.
0 1.
3 51 -55~150 5.
0 62.
5 UNITS V V A W A A W mJ oC oC/W July 21,2015-REV.
00 Page 1 PPJQ5465A Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS VSD TEST CONDITION VGS=0V,ID=-250uA VDS=...



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