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PTVA127002EV

Infineon
Part Number PTVA127002EV
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Jan 26, 2016
Detailed Description PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMO...
Datasheet PDF File PTVA127002EV PDF File

PTVA127002EV
PTVA127002EV

Overview
PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 65 Output Power 55 65 55 45 45 35 35 25 1200 MHz 25 Efficiency 1300 MHz 15 1400 MHz a127002ev_g1-1 15 30 32 34 36 38 40 42 44 46 48 PIN (dBm) Features • Broadband input and output matching • High gain and efficiency • Integrated ESD protection • Low thermal resistance • Excellent ruggedness • Pb-free and RoHS compliant • Capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak under RF pulse, 300 µS, 10% duty cycle.
RF Characteristics Pulsed RF Performance (tested in Infineon test fixture) VDD = 50 V, IDQ = 150 mA per side, POUT = 700 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 12% duty cycle Characteristic Gain Drain Efficiency Gain Flatness Return Loss Symbol Gps hD DG IRL Min 15.
5 50 — — Typ 16 56 1.
0 –20 Max — — 1.
3 –11 Unit dB % dB dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev.
03.
1, 2015-06-18 PTVA127002EV RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture) VDD = 50 V, IDQ = 150 mA per side, Input signal (tr = 7 ns, tf = 5 ns), 300 µs pulse width, 12% duty cycle, class AB test Mode of Operation ƒ IRL (MHz) (dB) Gain (dB) P1dB Eff POUT Gain (%) (W) (dB) P3dB Ef...


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