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PXAC180602MD

Part Number	PXAC180602MD
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jan 26, 2016
Detailed Description	PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a ...
Datasheet	PXAC180602MD PDF File

Overview

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET 60 W, 28 V, 1805 – 1880 MHz Description The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 1...

Similar Datasheet

PXAC180602MD Thermally-Enhanced High Power RF LDMOS FET - Infineon

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