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PXAC260622SC

Part Number	PXAC260622SC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jan 26, 2016
Detailed Description	PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 – 2690 MHz Description The PXAC260622SC is a ...
Datasheet	PXAC260622SC PDF File

Overview

PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 – 2690 MHz Description The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band.
It features dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC260622SC Package H-37248H-4 with formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 115 mA, ƒ = 2690 MHz, 3GPP WCDM...

Similar Datasheet

PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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