DatasheetsPDF.com

MGBR5V45

UTC
Part Number MGBR5V45
Manufacturer UTC
Description MOS GATED BARRIER RECTIFIER
Published Jan 26, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD MGBR5V45 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5V45 is a ...
Datasheet PDF File MGBR5V45 PDF File

MGBR5V45
MGBR5V45


Overview
UNISONIC TECHNOLOGIES CO.
, LTD MGBR5V45 Preliminary MOS GATED BARRIER RECTIFIER  DESCRIPTION The UTC MGBR5V45 is a surface mount mos gated barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high switching speed, etc.
 FEATURES * Very low forward voltage drop * High switching speed  SYMBOL - DIODE + SMB  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MGBR5V45L-SMB-R MGBR5V45G-SMB-R Note: Pin Assignment: A: Anode K: Common Cathode Package SMB Pin Assignment 12 KA Packing Tape Reel  MARKING Cathode Band for uni-directional Only UTC 5V45 Date Code L: Lead Free G: Halogen Free www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R204-040.
b MGBR5V45 Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER SYMBOL RATINGS UNIT DC Blocking Voltage Working Peak Reverse Voltage VRM VRWM 45 45 V V Repetitive Peak Reverse Voltage RMS Reverse Voltage VRRM VR(RMS) 45 32 V V Average Rectified Output Current TC=140°C IO 5A Non-Repetitive Peak Forward Surge Current 8.
3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 90 A Repetitive Peak Avalanche Power (1μs, 25°C) Operating Junction Temperature PARM TJ 5000 -65~+150 W °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS PARAMETER Junction to Ambient SYMBOL θJA RATINGS 70  ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) UNIT °C/W PARAMETER SYMBOL TEST CONDITIONS Reverse Breakdown Voltage (Note 1) V(BR)R IR=0.
5mA Instantaneous Forward Voltage VFM IF=5A, TJ=25°C IF=5A, TJ=125°C Leakage Current (...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)