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1SS286

Hitachi Semiconductor
Part Number 1SS286
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode
Published Mar 23, 2005
Detailed Description 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev. 1 Sep. 1995 Feat...
Datasheet PDF File 1SS286 PDF File

1SS286
1SS286

Overview
1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev.
1 Sep.
1995 Features • Very low reverse current.
• Detection efficiency is very good.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information Type No.
1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1.
Cathode 2.
Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100 –55 to +100 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse voltage Reverse curr...


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