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BLF10M6160

NXP
Part Number BLF10M6160
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 Gene...
Datasheet PDF File BLF10M6160 PDF File

BLF10M6160
BLF10M6160

Overview
BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev.
1 — 24 June 2014 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 920 to 960 32 32 22.
5 27 ACPR (dBc) 41[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.
3 Applications  RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range NXP Semiconductors BLF10M6160; BLF10M6LS160 Power LDMOS transistor 2.
Pinning information Table 2.
Pinning Pin Description BLF10M6160 (SOT502A) 1 drain 2 gate 3 source BLF10M6LS160 (SOT502B) 1 drain 2 gate 3 source [1] Connected to flange.
3.
Ordering information Simplified outline Graphic symbol 1 1 [1] 3 2 2 3 sym112 1 [1] 3 2 1 2 3 sym112 Table 3.
Ordering information Type number Package Name Description BLF10M6160 - flanged ceramic package; 2 mounting holes; 2 leads BLF10M6LS160 - earless flanged ceramic package; 2 leads Version SOT502A SOT502B 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature [1] Continuous use at maximum temperature will affect reliability.
Min 0.
5 65 [1] - Max 65 +13 +150 225 Unit V V C C 5.
Thermal characteristics ...


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