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BLF178XRS

NXP
Part Number BLF178XRS
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF178XR; BLF178XRS Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General d...
Datasheet PDF File BLF178XRS PDF File

BLF178XRS
BLF178XRS

Overview
BLF178XR; BLF178XRS Power LDMOS transistor Rev.
4 — 12 July 2013 Product data sheet 1.
Product profile 1.
1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Table 1.
Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1200 50 1400 Gp (dB) 23 28 D (%) 80 72 1.
2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 28 dB  Efficiency = 72 %  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors ...


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