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BLF2425M7LS250P

NXP
Part Number BLF2425M7LS250P
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1....
Datasheet PDF File BLF2425M7LS250P PDF File

BLF2425M7LS250P
BLF2425M7LS250P

Overview
BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev.
4 — 12 July 2013 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1.
Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 28 250 15 D (%) 51 1.
2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Excellent thermal stability  Integrated ESD protection  Designed for broadband operation (2400 MHz to 2500 MHz)  Internally matched  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  RF power a...


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