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BLF2425M9LS30

NXP
Part Number BLF2425M9LS30
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 1 — 3 June 2015 Objective data sheet 1. Product profile 1.1 G...
Datasheet PDF File BLF2425M9LS30 PDF File

BLF2425M9LS30
BLF2425M9LS30

Overview
BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev.
1 — 3 June 2015 Objective data sheet 1.
Product profile 1.
1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package.
Table 1.
Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.
5 D (%) 61 1.
2 Features and benefits  High efficiency  High power gain  Excellent ruggednes...


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