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BLF988S

NXP
Part Number BLF988S
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF988; BLF988S Power LDMOS transistor Rev. 2 — 1 August 2013 Product data sheet 1. Product profile 1.1 General descr...
Datasheet PDF File BLF988S PDF File

BLF988S
BLF988S

Overview
BLF988; BLF988S Power LDMOS transistor Rev.
2 — 1 August 2013 Product data sheet 1.
Product profile 1.
1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB pulsed, class-AB f1 = 860; f2 = 860.
1 860 250 - 20.
8 46 32 - 600 19.
8 58 - 1.
2 Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.
15 K/W  High power gain  High efficiency  Designed for broadband operation (400 MHz to 1000 MHz)  Internal input matching for high gain and optimum broadband operation  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding ...


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