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BLF9G20LS-160V

NXP
Part Number BLF9G20LS-160V
Manufacturer NXP
Description Power LDMOS transistor
Published Jan 27, 2016
Detailed Description BLF9G20LS-160V Power LDMOS transistor Rev. 2 — 21 May 2015 Product data sheet 1. Product profile 1.1 General descript...
Datasheet PDF File BLF9G20LS-160V PDF File

BLF9G20LS-160V
BLF9G20LS-160V

Overview
BLF9G20LS-160V Power LDMOS transistor Rev.
2 — 21 May 2015 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 800 28 35.
5 19.
8 33.
5 28 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing = 5 MHz.
1.
2 Features and benefits  Excellent ruggedness  High effic...


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