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IRHN7250SE

International Rectifier
Part Number IRHN7250SE
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Jan 27, 2016
Detailed Description PD - 91780B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN7250SE 200V, N-CHANNEL RAD Hard™ HEXFET® TECHNOL...
Datasheet PDF File IRHN7250SE PDF File

IRHN7250SE
IRHN7250SE

Overview
PD - 91780B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) IRHN7250SE 200V, N-CHANNEL RAD Hard™ HEXFET® TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHN7250SE 100K Rads (Si) 0.
10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-1 Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Req...


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