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GFP8N60

ETC
Part Number GFP8N60
Manufacturer ETC
Description N-Channel enhancement mode power field effect Transistors
Published Jan 27, 2016
Detailed Description GFP8N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar...
Datasheet PDF File GFP8N60 PDF File

GFP8N60
GFP8N60

Overview
GFP8N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology.
GFP8N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .
These devices are well suited for high efficiency switch mode power supply，electronic lamp ballasts based on half bridge topology.
GFP8N60、 ，、。 TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum ratings（，，T=25 ℃ ） Characteristics（） (） Symbol（） BVDSS ID VGS EAS PD TSTG RθJC VSD Value(） 600 7.
5 + 30 230 147 -55 ~150 0.
85 1.
4 Units() V A V mJ W ℃ ℃/ W V Characteristics Symbol (） VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min.
Typ.
() () 2.
0 - -- -- - 1.
0 - 8.
7 - 965 - 105 - 12 - 16.
5 - 60.
5 - 81 - 64.
5 - 28 - 4.
5 - 12 Page : 1/5 Max.
() 4.
0 +100 10 1.
2 1255 135 16 45 130 170 140 36 - Units () V nA uA Ω S Test Conditions () VDS= VGS,ID=250uA VGS= +30V, VDS= 0V VDS=600V ,VGS= 0V VGS= 10V,ID=3.
75A VDS= 40V, ID=3.
75A pF VGS= 0V, VDS= 25V F=1.
0MHz ns VDD= 300V, ID= 7.
5A RG=25 Ω nC VDS= 480V, VGS= 10V ID=7.
5A ID, Drain Current [ A] RDS(ON)[ Ω ], Drain-Source On-Resistance ID, Drain Current [ A] 101 Top: VGS 15.
0V 10.
0V 8.
0V 7.
0V 6.
5V 6.
0V 5.
5V Bottom: 5.
0V 100 101 150℃ 25℃ 100 -55℃ ※Notes 10-1 1.
250us Pulse Test 2.
Tc=25℃ 10-1 100 101 VDS, Drain-Source Voltage[V] Figure 1.
On-Region Characteristics 10-1 2 ※Notes: 1.
VDS=40V 2.
250us Pulse test 46 8 VGS, Gate-Source Voltage[V] 10 Figure 2.
Transfet Characteristics 3.
5 3.
0 2.
5 VGS=10V 2.
0 1.
5 VGS=20V 1.
0 ※Note:TJ=25 ℃ 0.
5 0 5 10 15 20 ID, Drain Current[A] Figure 3.
On-Resistance Variation vs Drain Current and Gate Voltage 2000 1800 1600 1400 1200 1000 800 600 400 200 0 10-1 Ciss=Cgs+Cgd(Cgd=shorted) Coss=Cds+Cgd Crss=Cgd Ciss Coss Crss ※Notes: 1.
VGS=0V 2.
...


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