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MTB50P03HDL

ON Semiconductor
Part Number MTB50P03HDL
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Jan 28, 2016
Detailed Description MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withs...
Datasheet PDF File MTB50P03HDL PDF File

MTB50P03HDL
MTB50P03HDL

Overview
MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured − Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • MVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MW) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted with min.
recommended pad size VDSS VDGR VGS VGSM ID ID IDM PD 30 Vdc 30 Vdc ±15 Vdc ± 20 Vpk 50 Adc 31 150 Apk 125 W 1.
0 W/°C 2.
5 W Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.
0 Vdc, Peak IL = 50 Apk, L = 1.
0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient, when mounted with the minimum recommended pad size TJ, Tstg EAS RRRqqqJJJCAA − 55 to 150 12...


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