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PMPB85ENEA

NXP
Part Number PMPB85ENEA
Manufacturer NXP
Description single N-channel Trench MOSFET
Published Jan 28, 2016
Detailed Description DFN2020MD-6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General descriptio...
Datasheet PDF File PMPB85ENEA PDF File

PMPB85ENEA
PMPB85ENEA

Overview
DFN2020MD-6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection • AEC-Q101 qualified 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 60 V ...


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