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PMXB75UPE

NXP
Part Number PMXB75UPE
Manufacturer NXP
Description P-channel Trench MOSFET
Published Jan 28, 2016
Detailed Description DFN1010D-3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel en...
Datasheet PDF File PMXB75UPE PDF File

PMXB75UPE
PMXB75UPE

Overview
DFN1010D-3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1.
5 kV HBM • Drain-source on-state resistance RDSon = 69 mΩ • Very low gate-source threshold voltage for portable applications VGS(th) = -0.
68 V 3.
Applications • High-side load swit...


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