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9N90-Q

Unisonic Technologies
Part Number 9N90-Q
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 9N90-Q 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced p...
Datasheet PDF File 9N90-Q PDF File

9N90-Q
9N90-Q

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 9N90-Q 9A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N90-Q uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES * RDS(ON) < 1.
4Ω @ VGS = 10V, ID = 4.
5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-TA3-T 9N90G-TA3-T 9N90L-T3P-T 9N90G-T3P-T Package TO-220 TO-3P Pin Assignment 123 GDS GDS Packing Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-A93.
B 9N90-Q Power MOSFET  ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 900 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current (TC = 25°C) ID 9.
0 A Pulsed Drain Current (Note 2) IDM 36 A Avalanche Current (Note 2) IAR 9.
0 A Avalanche Energy Single Pulsed(Note 3) Repetitive(Note 2) EAS EAR 500 28 mJ mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
0 V/ns Power Dissipation TO-220 TO-3P Linear Derating Factor above TC = TO-220 25°C TO-3P 147 W PD 208 1.
176 W W/°C 1.
66 W/°C Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature 3.
L = 12.
35mH, IAS = 9.
0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4.
ISD ≤ 9.
0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-3P TO-220 TO-3P SYMBOL θJA θJC RATING...


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