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1SV239

Toshiba Semiconductor
Part Number 1SV239
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 1SV239 VCO for UHF Radio • Ultra low series r...
Datasheet PDF File 1SV239 PDF File

1SV239
1SV239

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 1SV239 VCO for UHF Radio • Ultra low series resistance: rs = 0.
44 Ω (typ.
) • Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings...


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