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PJE8412

Pan Jit International
Part Number PJE8412
Manufacturer Pan Jit International
Description 30V N-Channel MOSFET
Published Jan 29, 2016
Detailed Description PPJE8412 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 350mA SOT-523 Features  RDS(ON...
Datasheet PDF File PJE8412 PDF File

PJE8412
PJE8412

Overview
PPJE8412 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 350mA SOT-523 Features  RDS(ON) , VGS@4.
5V, ID@350mA<1.
2Ω  RDS(ON) , VGS@2.
5V, ID@200mA<1.
6Ω  RDS(ON) , VGS@1.
8V, ID@80mA<2.
3Ω  RDS(ON) , VGS@1.
5V, ID@10mA<2.
5Ω(typ.
)  Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case : SOT-523 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
00007 ounces, 0.
002 grams  Marking: E12 Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID...


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