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RU30105R

Ruichips
Part Number RU30105R
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Jan 29, 2016
Detailed Description RU30105R N-Channel Advanced Power MOSFET MOSFET Features • 30V/125A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense ...
Datasheet PDF File RU30105R PDF File

RU30105R
RU30105R

Overview
RU30105R N-Channel Advanced Power MOSFET MOSFET Features • 30V/125A, RDS (ON) =3.
2 mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUN.
, 2012 Rating 30 ±20 175 -55 to 175 ① 125 ② 500 ① 125 ① 88 125 62.
5 1.
2 Unit V °C °C A A A W W °C/W 441 mJ www.
ruichips.
com RU30105R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30105R Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=60A 30 2 V 1 µA 30 - 4V ±100 nA 3.
2 4 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A...


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