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RU3089L

Ruichips
Part Number RU3089L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Jan 29, 2016
Detailed Description RU3089L N-Channel Advanced Power MOSFET MOSFET Features • 30V/89A, RDS (ON) =3.8mΩ (Typ.)@VGS=10V RDS (ON) =5mΩ (Typ.)@...
Datasheet PDF File RU3089L PDF File

RU3089L
RU3089L

Overview
RU3089L N-Channel Advanced Power MOSFET MOSFET Features • 30V/89A, RDS (ON) =3.
8mΩ (Typ.
)@VGS=10V RDS (ON) =5mΩ (Typ.
)@VGS=4.
5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Application Systems Pin Description TO-252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– JUL.
, 2012 Rating 30 ±20 175 -55 to 175 ① 8...


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