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RU40150S

Ruichips
Part Number RU40150S
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Jan 29, 2016
Detailed Description RU40150S N-Channel Advanced Power MOSFET MOSFET Features • 40V/150A, RDS (ON) =3mΩ(Typ.)@VGS=10V • Super High Dense Cel...
Datasheet PDF File RU40150S PDF File

RU40150S
RU40150S


Overview
RU40150S N-Channel Advanced Power MOSFET MOSFET Features • 40V/150A, RDS (ON) =3mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-263 Applications • DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co.
, Ltd Rev.
A– SEP.
, 2012 Rating 40 ±20 175 -55 to 175 ① 150 ② 600 ① 150 108 188 94 0.
8 Unit V °C °C A A A W W °C/W 400 mJ www.
ruichips.
com RU40150S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40150S Unit Min.
Typ.
Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 40V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=75A 40 2 V 1 µA 30 34V ±100 nA 3 4 mΩ Diode Characteristics ④ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=75A, VGS=0V ISD=75A, dlSD/dt=100A/µs VGS...


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